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Microchip TechnologyModuleRoHS

MSCSM120AM042CT6AG

PM-MOSFET-SIC-SBD~-SP6C

Subcategory

Transistors Fets Mosfets Arrays

Package

Module

Status

Active

$896.94 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandMicrochip Technology
ModelMSCSM120AM042CT6AG
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
FET Type2 N Channel (Phase Leg)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Rds On (Max)5.2mOhm @ 240A, 20V
Vgs(th) (Max)2.8V @ 6mA
Gate Charge (Qg)1392nC @ 20V
Input Capacitance (Ciss)18.1pF @ 1000V
Power Dissipation (Max)2.031kW (Tc)
Supplier Device PackageSP6C
RoHSRoHS
Part StatusActive

Application & Notes

MSCSM120AM042CT6AG by Microchip Technology is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.2mOhm @ 240A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N Channel (Phase Leg)
FET FeatureSilicon Carbide (SiC)
Power - Max2.031kW (Tc)
Vgs(th) (Max) @ Id2.8V @ 6mA
Rds On (Max) @ Id, Vgs5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs1392nC @ 20V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds18.1pF @ 1000V
Current - Continuous Drain (Id) @ 25°C495A (Tc)

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