MSCM20XM10T3XG
PM-MOSFET-OTHER-SP3X
Transistors Fets Mosfets Arrays
Module
Active
$241.64 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | MSCM20XM10T3XG |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 125°C (Tc) |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) | 9.7mOhm @ 81A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 161nC @ 10V |
| Input Capacitance (Ciss) | 10.7nF @ 50V |
| Power Dissipation (Max) | 341W (Tc) |
| Supplier Device Package | SP3X |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MSCM20XM10T3XG by Microchip Technology is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.7mOhm @ 81A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MSCM20XM10T3XG
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All Technical Specifications
| FET Type | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Standard |
| Power - Max | 341W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 81A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 161nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 10.7nF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
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