IXYSE2RoHS
MIXA61H1200ED
IGBT MODULE 1200V 85A 290W E2
Category
Subcategory
Transistors Igbts Modules
Package
E2
Status
Active
$73.54 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | MIXA61H1200ED |
| Package / Case | E2 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Power Dissipation (Max) | 290 W |
| Supplier Device Package | E2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MIXA61H1200ED by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The E2 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| IGBT Type | PT |
| Power - Max | 290 W |
| Configuration | Full Bridge Inverter |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 55A |
| Current - Collector (Ic) (Max) | 85 A |
| Current - Collector Cutoff (Max) | 500 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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