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IXYSY3-LiRoHS

MII400-12E4

IGBT MOD 1200V 420A 1700W Y3LI

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelMII400-12E4
Package / CaseY3-Li
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
Power Dissipation (Max)1700 W
Supplier Device PackageY3-Li
RoHSRoHS
Part StatusObsolete

Application & Notes

MII400-12E4 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Y3-Li package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

InputStandard
IGBT TypeNPT
Power - Max1700 W
ConfigurationHalf Bridge
NTC ThermistorNo
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 300A
Current - Collector (Ic) (Max)420 A
Input Capacitance (Cies) @ Vce17 nF @ 25 V
Current - Collector Cutoff (Max)3.3 mA
Voltage - Collector Emitter Breakdown (Max)1200 V

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