IXYSTO-268-3, D³Pak (2 Leads + Tab), TO-268AARoHS
IXYT85N120A4HV
IGBT GENX4 1200V 85A TO268HV
Category
Subcategory
Transistors Igbts Single
Package
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Status
Active
$17.24 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXYT85N120A4HV |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 1150 W |
| Supplier Device Package | TO-268HV (IXYT) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXYT85N120A4HV by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 200 nC |
| Power - Max | 1150 W |
| Test Condition | 600V, 60A, 5Ohm, 15V |
| Switching Energy | 4.9mJ (on), 8.3mJ (off) |
| Td (on/off) @ 25°C | 40ns/400ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 85A |
| Reverse Recovery Time (trr) | 40 ns |
| Current - Collector (Ic) (Max) | 300 A |
| Current - Collector Pulsed (Icm) | 520 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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