IXYSTO-3P-3, SC-65-3RoHS
IXYQ30N65B3D1
DISC IGBT XPT-GENX3 TO-3P (3)
Category
Subcategory
Transistors Igbts Single
Package
TO-3P-3, SC-65-3
Series
GenX3™, XPT™
Status
Active
$5.67 / unit (market reference)
MOQ: 300 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXYQ30N65B3D1 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 270 W |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXYQ30N65B3D1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 45 nC |
| Power - Max | 270 W |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Switching Energy | 830µJ (on), 640µJ (off) |
| Td (on/off) @ 25°C | 17ns/87ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Reverse Recovery Time (trr) | 38 ns |
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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