IXYSTO-220-3RoHS
IXYP8N90C3D1
IGBT 900V 20A 125W TO220
Category
Subcategory
Transistors Igbts Single
Package
TO-220-3
Series
GenX3™, XPT™
Status
Active
$3.25 / unit (market reference)
MOQ: 300 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXYP8N90C3D1 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 125 W |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXYP8N90C3D1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 13.3 nC |
| Power - Max | 125 W |
| Test Condition | 450V, 8A, 30Ohm, 15V |
| Switching Energy | 460µJ (on), 180µJ (off) |
| Td (on/off) @ 25°C | 16ns/40ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 8A |
| Reverse Recovery Time (trr) | 114 ns |
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
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