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IXYSTO-220-3RoHS

IXYP20N65C3D1

IGBT 650V 18A 50W TO220

IXYP20N65C3D1 by IXYS

$3.26 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXYP20N65C3D1
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Power Dissipation (Max)200 W
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusActive

Application & Notes

IXYP20N65C3D1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypePT
Input TypeStandard
Gate Charge30 nC
Power - Max200 W
Test Condition400V, 20A, 20Ohm, 15V
Switching Energy430µJ (on), 350µJ (off)
Td (on/off) @ 25°C19ns/80ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Reverse Recovery Time (trr)135 ns
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)105 A
Voltage - Collector Emitter Breakdown (Max)650 V

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