PartsCubeGlobal
IXYSTO-247-3RoHS

IXYH30N120C3D1

IGBT 1200V 66A 416W TO247

$11.93 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXYH30N120C3D1
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)416 W
Supplier Device PackageTO-247 (IXTH)
RoHSRoHS
Part StatusActive

Application & Notes

IXYH30N120C3D1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

IRG7PH35UD1-EPRochester Electronics, LLC

IGBT W/ULTRA-LOW VF DIODE FOR IN

All Technical Specifications

Input TypeStandard
Gate Charge69 nC
Power - Max416 W
Test Condition600V, 30A, 10Ohm, 15V
Switching Energy2.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C19ns/130ns
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 30A
Reverse Recovery Time (trr)195 ns
Current - Collector (Ic) (Max)66 A
Current - Collector Pulsed (Icm)133 A
Voltage - Collector Emitter Breakdown (Max)1200 V

Request a Quote

Submit your quantity and details — we will reply within 24 hours.