IXYSTO-220-3RoHS
IXXP50N60B3
IGBT
Category
Subcategory
Transistors Igbts Single
Package
TO-220-3
Series
XPT™, GenX3™
Status
Active
$6.48 / unit (market reference)
MOQ: 300 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXXP50N60B3 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 600 W |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXXP50N60B3 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 70 nC |
| Power - Max | 600 W |
| Test Condition | 360V, 36A, 5Ohm, 15V |
| Switching Energy | 670µJ (on), 1.2mJ (off) |
| Td (on/off) @ 25°C | 27ns/150ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 36A |
| Reverse Recovery Time (trr) | 40 ns |
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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