IXYSTO-247-3RoHS
IXXH110N65C4
IGBT 650V 234A 880W TO247AD
.jpg)
Category
Subcategory
Transistors Igbts Single
Package
TO-247-3
Series
GenX4™, XPT™
Status
Active
$9.46 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXXH110N65C4 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 880 W |
| Supplier Device Package | TO-247 (IXXH) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXXH110N65C4 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 180 nC |
| Power - Max | 880 W |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Switching Energy | 2.3mJ (on), 600µJ (off) |
| Td (on/off) @ 25°C | 35ns/143ns |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 110A |
| Current - Collector (Ic) (Max) | 234 A |
| Current - Collector Pulsed (Icm) | 600 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.