PartsCubeGlobal
IXYSTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

IXTY26P10T-TRL

MOSFET P-CH 100V 26A TO252

Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

TrenchP™

Status

Active

$1.90 / unit (market reference)

MOQ: 2500 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTY26P10T-TRL
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)90mOhm @ 13A, 10V
Vgs(th) (Max)4.5V @ 250µA
Gate Charge (Qg)52 nC @ 10 V
Input Capacitance (Ciss)3820 pF @ 25 V
Power Dissipation (Max)150W (Tc)
Drive Voltage10V
Supplier Device PackageTO-252AA
RoHSRoHS
Part StatusActive

Application & Notes

IXTY26P10T-TRL by IXYS is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

SFT1423-S-TL-Eonsemi

MOSFET N-CH 500V 2A TP-FA

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA
Rds On (Max) @ Id, Vgs90mOhm @ 13A, 10V
Power Dissipation (Max)150W (Tc)
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds3820 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C26A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.