IXYSTO-252-3, DPak (2 Leads + Tab), SC-63RoHS
IXTY1R6N100D2
MOSFET N-CH 1000V 1.6A TO252
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Series
Depletion
Status
Active
$3.04 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTY1R6N100D2 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1000 V |
| Rds On (Max) | 10Ohm @ 800mA, 0V |
| Gate Charge (Qg) | 27 nC @ 5 V |
| Input Capacitance (Ciss) | 645 pF @ 25 V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | TO-252AA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTY1R6N100D2 by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10Ohm @ 800mA, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 800mA, 0V |
| Power Dissipation (Max) | 100W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
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