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IXYSTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

IXTY02N50D

MOSFET N-CH 500V 200MA TO252

IXTY02N50D by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

Depletion

Status

Active

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf

$2.22 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTY02N50D
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)30Ohm @ 50mA, 0V
Input Capacitance (Ciss)120 pF @ 25 V
Power Dissipation (Max)1.1W (Ta), 25W (Tc)
Supplier Device PackageTO-252AA
RoHSRoHS
Part StatusActive

Application & Notes

IXTY02N50D by IXYS is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30Ohm @ 50mA, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET FeatureDepletion Mode
Rds On (Max) @ Id, Vgs30Ohm @ 50mA, 0V
Power Dissipation (Max)1.1W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)

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