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IXYSTO-247-3RoHS

IXTX120P20T

MOSFET P-CH 200V 120A PLUS247-3

IXTX120P20T by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

TrenchP™

Status

Active

$27.85 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTX120P20T
Package / CaseTO-247-3
Mounting TypeThrough Hole
FET TypeP-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)30mOhm @ 60A, 10V
Vgs(th) (Max)4.5V @ 250µA
Gate Charge (Qg)740 nC @ 10 V
Input Capacitance (Ciss)73000 pF @ 25 V
Supplier Device PackagePLUS247™-3
RoHSRoHS
Part StatusActive

Application & Notes

IXTX120P20T by IXYS is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 60A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA
Rds On (Max) @ Id, Vgs30mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs740 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds73000 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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