IXYSTO-251-3 Short Leads, IPak, TO-251AARoHS
IXTU01N80
MOSFET N-CH 800V 100MA TO251
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-251-3 Short Leads, IPak, TO-251AA
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTU01N80 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 800 V |
| Rds On (Max) | 50Ohm @ 100mA, 10V |
| Vgs(th) (Max) | 4.5V @ 25µA |
| Gate Charge (Qg) | 8 nC @ 10 V |
| Input Capacitance (Ciss) | 60 pF @ 25 V |
| Power Dissipation (Max) | 25W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-251AA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTU01N80 by IXYS is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50Ohm @ 100mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Rds On (Max) @ Id, Vgs | 50Ohm @ 100mA, 10V |
| Power Dissipation (Max) | 25W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.