PartsCubeGlobal
IXYSTO-268-3, D³Pak (2 Leads + Tab), TO-268AARoHS

IXTT440N04T4HV

MOSFET N-CH 40V 440A TO268

IXTT440N04T4HV by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Series

Trench

Status

Active

$10.73 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTT440N04T4HV
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)1.25mOhm @ 100A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)480 nC @ 10 V
Input Capacitance (Ciss)26000 pF @ 25 V
Power Dissipation (Max)940W (Tc)
Drive Voltage10V
Supplier Device PackageTO-268HV (IXTT)
RoHSRoHS
Part StatusActive

Application & Notes

IXTT440N04T4HV by IXYS is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.25mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

IXTT02N450HVIXYS

MOSFET N-CH 4500V 200MA TO268

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs1.25mOhm @ 100A, 10V
Power Dissipation (Max)940W (Tc)
Gate Charge (Qg) (Max) @ Vgs480 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds26000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C440A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.