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IXYSTO-220-3 Full Pack, Isolated TabRoHS

IXTP12N70X2M

MOSFET N-CH 700V 12A TO220

IXTP12N70X2M by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack, Isolated Tab

Series

Ultra X2

Status

Active

$3.91 / unit (market reference)

MOQ: 50 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTP12N70X2M
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)700 V
Rds On (Max)300mOhm @ 6A, 10V
Vgs(th) (Max)4.5V @ 250µA
Gate Charge (Qg)19 nC @ 10 V
Input Capacitance (Ciss)960 pF @ 25 V
Power Dissipation (Max)40W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220 Isolated Tab
RoHSRoHS
Part StatusActive

Application & Notes

IXTP12N70X2M by IXYS is an N-channel power MOSFET rated at 700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack, Isolated Tab package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA
Rds On (Max) @ Id, Vgs300mOhm @ 6A, 10V
Power Dissipation (Max)40W (Tc)
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Drain to Source Voltage (Vdss)700 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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