IXYSISOPLUSi5-Pak™RoHS
IXTL2X200N085T
MOSFET 2N-CH 85V 112A I5-PAK
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
ISOPLUSi5-Pak™
Series
TrenchMV™
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTL2X200N085T |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 85V |
| Rds On (Max) | 6mOhm @ 50A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 152nC @ 10V |
| Input Capacitance (Ciss) | 7600pF @ 25V |
| Power Dissipation (Max) | 150W |
| Supplier Device Package | ISOPLUSi5-Pak™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXTL2X200N085T by IXYS is an N-channel power MOSFET rated at 85V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The ISOPLUSi5-Pak™ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 150W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 152nC @ 10V |
| Drain to Source Voltage (Vdss) | 85V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 112A |
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