IXYSTO-247-3RoHS
IXTH2R4N120P
MOSFET N-CH 1200V 2.4A TO247
.jpg)
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
Polar
Status
Active
$7.19 / unit (market reference)
MOQ: 30 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTH2R4N120P |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 7.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 37 nC @ 10 V |
| Input Capacitance (Ciss) | 1207 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247 (IXTH) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTH2R4N120P by IXYS is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1207 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.