PartsCubeGlobal
IXYSTO-247-3RoHS

IXTH1N250

MOSFET N-CH 2500V 1.5A TO-247AD

IXTH1N250 by IXYS

$40.55 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTH1N250
Package / CaseTO-247-3
Mounting TypeThrough Hole
FET TypeN-Channel
Drain to Source Voltage (Vdss)2500 V
Rds On (Max)40Ohm @ 750mA, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)41 nC @ 10 V
Input Capacitance (Ciss)1660 pF @ 25 V
Supplier Device PackageTO-247AD
RoHSRoHS
Part StatusActive

Application & Notes

IXTH1N250 by IXYS is an N-channel power MOSFET rated at 2500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40Ohm @ 750mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

SPW11N60C3FKSA1Rochester Electronics, LLC

MOSFET N-CH 650V 11A TO247-3

All Technical Specifications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs40Ohm @ 750mA, 10V
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Drain to Source Voltage (Vdss)2500 V
Input Capacitance (Ciss) (Max) @ Vds1660 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.