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IXYSTO-247-3RoHS

IXTH16N10D2

MOSFET N-CH 100V 16A TO247

IXTH16N10D2 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

Depletion

Status

Active

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n10_datasheet.pdf.pdf

$15.07 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTH16N10D2
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)64mOhm @ 8A, 0V
Gate Charge (Qg)225 nC @ 5 V
Input Capacitance (Ciss)5700 pF @ 25 V
Power Dissipation (Max)830W (Tc)
Drive Voltage0V
Supplier Device PackageTO-247 (IXTH)
RoHSRoHS
Part StatusActive

Application & Notes

IXTH16N10D2 by IXYS is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 64mOhm @ 8A, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET FeatureDepletion Mode
Rds On (Max) @ Id, Vgs64mOhm @ 8A, 0V
Power Dissipation (Max)830W (Tc)
Gate Charge (Qg) (Max) @ Vgs225 nC @ 5 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)0V
Current - Continuous Drain (Id) @ 25°C16A (Tc)

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