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IXYSTO-247-3RoHS

IXTH13N110

MOSFET N-CH 1100V 13A TO247

IXTH13N110 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

MegaMOS™

Status

Obsolete

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_standard_ixth13n110_datasheet.pdf.pdf

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXTH13N110
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1100 V
Rds On (Max)920mOhm @ 500mA, 10V
Vgs(th) (Max)4.5V @ 250µA
Gate Charge (Qg)195 nC @ 10 V
Input Capacitance (Ciss)5650 pF @ 25 V
Power Dissipation (Max)360W (Tc)
Drive Voltage10V
Supplier Device PackageTO-247 (IXTH)
RoHSRoHS
Part StatusObsolete

Application & Notes

IXTH13N110 by IXYS is an N-channel power MOSFET rated at 1100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 920mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA
Rds On (Max) @ Id, Vgs920mOhm @ 500mA, 10V
Power Dissipation (Max)360W (Tc)
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Drain to Source Voltage (Vdss)1100 V
Input Capacitance (Ciss) (Max) @ Vds5650 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tc)

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