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IXYSTO-247-3RoHS

IXTH12N120

MOSFET N-CH 1200V 12A TO247

IXTH12N120 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Status

Obsolete

Datasheet

https://ixapps.ixys.com/DataSheet/IXTH12N100.pdf

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTH12N120
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Rds On (Max)1.4Ohm @ 6A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)95 nC @ 10 V
Input Capacitance (Ciss)3400 pF @ 25 V
Power Dissipation (Max)500W (Tc)
Drive Voltage10V
Supplier Device PackageTO-247 (IXTH)
RoHSRoHS
Part StatusObsolete

Application & Notes

IXTH12N120 by IXYS is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs1.4Ohm @ 6A, 10V
Power Dissipation (Max)500W (Tc)
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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