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IXYSTO-247-3 VariantRoHS

IXTH06N220P3HV

MOSFET N-CH 2200V 600MA TO247HV

IXTH06N220P3HV by IXYS

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXTH06N220P3HV
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)2200 V
Rds On (Max)80Ohm @ 300mA, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)10.4 nC @ 10 V
Input Capacitance (Ciss)290 pF @ 25 V
Power Dissipation (Max)104W (Tc)
Drive Voltage10V
Supplier Device PackageTO-247HV
RoHSRoHS
Part StatusActive

Application & Notes

IXTH06N220P3HV by IXYS is an N-channel power MOSFET rated at 2200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 Variant package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 80Ohm @ 300mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs80Ohm @ 300mA, 10V
Power Dissipation (Max)104W (Tc)
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 10 V
Drain to Source Voltage (Vdss)2200 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C600mA (Tc)

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