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IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IXTA88N085T

MOSFET N-CH 85V 88A TO263

IXTA88N085T by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

TrenchMV™

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXTA88N085T
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)85 V
Rds On (Max)11mOhm @ 25A, 10V
Vgs(th) (Max)4V @ 100µA
Gate Charge (Qg)69 nC @ 10 V
Input Capacitance (Ciss)3140 pF @ 25 V
Power Dissipation (Max)230W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263AA
RoHSRoHS
Part StatusObsolete

Application & Notes

IXTA88N085T by IXYS is an N-channel power MOSFET rated at 85 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 100µA
Rds On (Max) @ Id, Vgs11mOhm @ 25A, 10V
Power Dissipation (Max)230W (Tc)
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Drain to Source Voltage (Vdss)85 V
Input Capacitance (Ciss) (Max) @ Vds3140 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C88A (Tc)

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