PartsCubeGlobal
IXYSTO-247-3RoHS

IXSH30N60B

IGBT 600V 55A 200W TO247AD

Subcategory

Transistors Igbts Single

Package

TO-247-3

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXSH30N60B
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)200 W
Supplier Device PackageTO-247AD
RoHSRoHS
Part StatusObsolete

Application & Notes

IXSH30N60B by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

IRG7PH35UD1-EPRochester Electronics, LLC

IGBT W/ULTRA-LOW VF DIODE FOR IN

All Technical Specifications

IGBT TypePT
Input TypeStandard
Gate Charge100 nC
Power - Max200 W
Test Condition480V, 30A, 4.7Ohm, 15V
Switching Energy1.5mJ (off)
Td (on/off) @ 25°C30ns/150ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)110 A
Voltage - Collector Emitter Breakdown (Max)600 V

Request a Quote

Submit your quantity and details — we will reply within 24 hours.