IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS
IXSA10N60B2D1
IGBT 600V 20A 100W TO263
Category
Subcategory
Transistors Igbts Single
Package
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXSA10N60B2D1 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 100 W |
| Supplier Device Package | TO-263AA |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXSA10N60B2D1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 17 nC |
| Power - Max | 100 W |
| Test Condition | 480V, 10A, 30Ohm, 15V |
| Switching Energy | 430µJ (off) |
| Td (on/off) @ 25°C | 30ns/180ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.