IXYSTO-247-3RoHS
IXGX82N120B3
IGBT 1200V 230A 1250W PLUS247
Category
Subcategory
Transistors Igbts Single
Package
TO-247-3
Series
GenX3™
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXGX82N120B3 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 1250 W |
| Supplier Device Package | PLUS247™-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXGX82N120B3 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 350 nC |
| Power - Max | 1250 W |
| Test Condition | 600V, 80A, 2Ohm, 15V |
| Switching Energy | 5mJ (on), 3.3mJ (off) |
| Td (on/off) @ 25°C | 30ns/210ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 82A |
| Current - Collector (Ic) (Max) | 230 A |
| Current - Collector Pulsed (Icm) | 500 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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