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IXYSTO-247-3RoHS

IXGX35N120B

IGBT 1200V 70A 350W PLUS247

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXGX35N120B
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)350 W
Supplier Device PackagePLUS247™-3
RoHSRoHS
Part StatusActive

Application & Notes

IXGX35N120B by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypePT
Input TypeStandard
Gate Charge170 nC
Power - Max350 W
Test Condition960V, 35A, 5Ohm, 15V
Switching Energy3.8mJ (off)
Td (on/off) @ 25°C50ns/180ns
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 35A
Current - Collector (Ic) (Max)70 A
Current - Collector Pulsed (Icm)140 A
Voltage - Collector Emitter Breakdown (Max)1200 V

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