IXYSTO-247-3RoHS
IXGX32N170AH1
IGBT 1700V 32A 350W PLUS247
Category
Subcategory
Transistors Igbts Single
Package
TO-247-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXGX32N170AH1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 350 W |
| Supplier Device Package | PLUS247™-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXGX32N170AH1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 157 nC |
| Power - Max | 350 W |
| Test Condition | 850V, 32A, 2.7Ohm, 15V |
| Switching Energy | 4.1mJ (on), 1.25mJ (off) |
| Td (on/off) @ 25°C | 27ns/270ns |
| Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 21A |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Collector (Ic) (Max) | 32 A |
| Current - Collector Pulsed (Icm) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
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