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IXYSTO-220-3RoHS

IXGP8N100

IGBT 1000V 16A 54W TO220

Subcategory

Transistors Igbts Single

Package

TO-220-3

Status

Obsolete

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_igbts/littelfuse_discrete_igbts_pt_ixg_8n100_datasheet.pdf.pdf

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXGP8N100
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)54 W
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusObsolete

Application & Notes

IXGP8N100 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypePT
Input TypeStandard
Gate Charge26.5 nC
Power - Max54 W
Test Condition800V, 8A, 120Ohm, 15V
Switching Energy2.3mJ (off)
Td (on/off) @ 25°C15ns/600ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 8A
Current - Collector (Ic) (Max)16 A
Current - Collector Pulsed (Icm)32 A
Voltage - Collector Emitter Breakdown (Max)1000 V

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