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IXYSTO-220-3RoHS

IXGP4N100

IGBT 1000V 8A 40W TO220AB

Subcategory

Transistors Igbts Single

Package

TO-220-3

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXGP4N100
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)40 W
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusActive

Application & Notes

IXGP4N100 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

Input TypeStandard
Gate Charge13.6 nC
Power - Max40 W
Test Condition800V, 4A, 120Ohm, 15V
Switching Energy900µJ (off)
Td (on/off) @ 25°C20ns/390ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 4A
Current - Collector (Ic) (Max)8 A
Current - Collector Pulsed (Icm)16 A
Voltage - Collector Emitter Breakdown (Max)1000 V

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