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IXYSTO-220-3RoHS

IXGP42N30C3

IGBT 300V 223W TO220AB

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXGP42N30C3
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)223 W
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusActive

Application & Notes

IXGP42N30C3 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypePT
Input TypeStandard
Gate Charge76 nC
Power - Max223 W
Test Condition200V, 21A, 10Ohm, 15V
Switching Energy120µJ (on), 150µJ (off)
Td (on/off) @ 25°C21ns/113ns
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 42A
Current - Collector Pulsed (Icm)250 A
Voltage - Collector Emitter Breakdown (Max)300 V

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