IXYSTO-220-3RoHS
IXGP30N60B2
IGBT 600V 70A 190W TO220
Category
Subcategory
Transistors Igbts Single
Package
TO-220-3
Series
HiPerFAST™
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXGP30N60B2 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 190 W |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXGP30N60B2 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 66 nC |
| Power - Max | 190 W |
| Test Condition | 400V, 24A, 5Ohm, 15V |
| Switching Energy | 320µJ (off) |
| Td (on/off) @ 25°C | 13ns/110ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 24A |
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.