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IXYSTO-247-3RoHS

IXGH28N60A3

IGBT

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXGH28N60A3
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)190 W
Supplier Device PackageTO-247AD
RoHSRoHS
Part StatusObsolete

Application & Notes

IXGH28N60A3 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypePT
Input TypeStandard
Gate Charge66 nC
Power - Max190 W
Test Condition480V, 24A, 10Ohm, 15V
Switching Energy700µJ (on), 2.4mJ (off)
Td (on/off) @ 25°C18ns/300ns
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 24A
Reverse Recovery Time (trr)26 ns
Current - Collector (Ic) (Max)75 A
Current - Collector Pulsed (Icm)170 A
Voltage - Collector Emitter Breakdown (Max)600 V

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