PartsCubeGlobal
IXYSTO-220-3, Short TabRoHS

IXFV30N50P

MOSFET N-CH 500V 30A PLUS220

IXFV30N50P by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3, Short Tab

Series

HiPerFET™, PolarHT™

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFV30N50P
Package / CaseTO-220-3, Short Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)200mOhm @ 15A, 10V
Vgs(th) (Max)5V @ 4mA
Gate Charge (Qg)70 nC @ 10 V
Input Capacitance (Ciss)4150 pF @ 25 V
Power Dissipation (Max)460W (Tc)
Drive Voltage10V
Supplier Device PackagePLUS220
RoHSRoHS
Part StatusObsolete

Application & Notes

IXFV30N50P by IXYS is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3, Short Tab package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

2SK3821-ERochester Electronics, LLC

MOSFET N-CH 100V 40A SMP

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 4mA
Rds On (Max) @ Id, Vgs200mOhm @ 15A, 10V
Power Dissipation (Max)460W (Tc)
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.