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IXYSTO-268-3, D³Pak (2 Leads + Tab), TO-268AARoHS

IXFT170N25X3HV

MOSFET N-CH 250V 170A TO268HV

IXFT170N25X3HV by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Series

HiPerFET™, Ultra X3

Status

Active

$19.96 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFT170N25X3HV
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)7.4mOhm @ 85A, 10V
Vgs(th) (Max)4.5V @ 4mA
Gate Charge (Qg)190 nC @ 10 V
Input Capacitance (Ciss)13500 pF @ 25 V
Power Dissipation (Max)960W (Tc)
Drive Voltage10V
Supplier Device PackageTO-268HV (IXFT)
RoHSRoHS
Part StatusActive

Application & Notes

IXFT170N25X3HV by IXYS is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.4mOhm @ 85A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 4mA
Rds On (Max) @ Id, Vgs7.4mOhm @ 85A, 10V
Power Dissipation (Max)960W (Tc)
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds13500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C170A (Tc)

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