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IXYSTO-247-3RoHS

IXFR64N60Q3

MOSFET N-CH 600V 42A ISOPLUS247

IXFR64N60Q3 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

HiPerFET™, Q3 Class

Status

Active

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n60q3_datasheet.pdf.pdf

$38.03 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFR64N60Q3
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)104mOhm @ 32A, 10V
Vgs(th) (Max)6.5V @ 4mA
Gate Charge (Qg)190 nC @ 10 V
Input Capacitance (Ciss)9930 pF @ 25 V
Power Dissipation (Max)568W (Tc)
Drive Voltage10V
Supplier Device PackageISOPLUS247™
RoHSRoHS
Part StatusActive

Application & Notes

IXFR64N60Q3 by IXYS is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 104mOhm @ 32A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id6.5V @ 4mA
Rds On (Max) @ Id, Vgs104mOhm @ 32A, 10V
Power Dissipation (Max)568W (Tc)
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds9930 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C42A (Tc)

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