IXYSTO-247-3RoHS
IXFR12N100
MOSFET N-CH 1000V 10A ISOPLUS247
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Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
HiPerFET™
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFR12N100 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1000 V |
| Rds On (Max) | 1.1Ohm @ 6A, 10V |
| Vgs(th) (Max) | 5.5V @ 4mA |
| Gate Charge (Qg) | 90 nC @ 10 V |
| Input Capacitance (Ciss) | 2900 pF @ 25 V |
| Supplier Device Package | ISOPLUS247™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXFR12N100 by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.1Ohm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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