IXYSSOT-227-4, miniBLOCRoHS
IXFN50N120SIC
SICFET N-CH 1200V 47A SOT227B
Category
Subcategory
Transistors Fets Mosfets Single
Package
SOT-227-4, miniBLOC
Status
Active
$73.74 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFN50N120SIC |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 50mOhm @ 40A, 20V |
| Vgs(th) (Max) | 2.2V @ 2mA |
| Gate Charge (Qg) | 100 nC @ 20 V |
| Input Capacitance (Ciss) | 1900 pF @ 1000 V |
| Drive Voltage | 20V |
| Supplier Device Package | SOT-227B |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXFN50N120SIC by IXYS is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 40A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
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