IXYSTO-264-3, TO-264AARoHS
IXFK180N10
MOSFET N-CH 100V 180A TO264AA
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-264-3, TO-264AA
Series
HiPerFET™
Status
Not For New Designs
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFK180N10 |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 8mOhm @ 90A, 10V |
| Vgs(th) (Max) | 4V @ 8mA |
| Gate Charge (Qg) | 390 nC @ 10 V |
| Input Capacitance (Ciss) | 10900 pF @ 25 V |
| Power Dissipation (Max) | 560W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-264AA (IXFK) |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
IXFK180N10 by IXYS is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-264-3, TO-264AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8mOhm @ 90A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 90A, 10V |
| Power Dissipation (Max) | 560W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
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