IXYSTO-247-3RoHS
IXFH4N100Q
MOSFET N-CH 1000V 4A TO247AD
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
HiPerFET™, Q Class
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFH4N100Q |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1000 V |
| Rds On (Max) | 3Ohm @ 2A, 10V |
| Vgs(th) (Max) | 5V @ 1.5mA |
| Gate Charge (Qg) | 39 nC @ 10 V |
| Input Capacitance (Ciss) | 1050 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247AD (IXFH) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXFH4N100Q by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3Ohm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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