IXYSISOPLUS220™RoHS
IXFC14N60P
MOSFET N-CH 600V 8A ISOPLUS220
Category
Subcategory
Transistors Fets Mosfets Single
Package
ISOPLUS220™
Series
HiPerFET™, PolarHT™
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFC14N60P |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 630mOhm @ 7A, 10V |
| Vgs(th) (Max) | 5.5V @ 2.5mA |
| Gate Charge (Qg) | 36 nC @ 10 V |
| Input Capacitance (Ciss) | 2500 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | ISOPLUS220™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IXFC14N60P by IXYS is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The ISOPLUS220™ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 630mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 7A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
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