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IXYSTO-264-3, TO-264AARoHS

IXFB100N50P

MOSFET N-CH 500V 100A PLUS264

IXFB100N50P by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-264-3, TO-264AA

Series

HiPerFET™, Polar

Status

Active

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb100n50p_datasheet.pdf.pdf

$28.04 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFB100N50P
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)49mOhm @ 50A, 10V
Vgs(th) (Max)5V @ 8mA
Gate Charge (Qg)240 nC @ 10 V
Input Capacitance (Ciss)20000 pF @ 25 V
Power Dissipation (Max)1890W (Tc)
Drive Voltage10V
Supplier Device PackagePLUS264™
RoHSRoHS
Part StatusActive

Application & Notes

IXFB100N50P by IXYS is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-264-3, TO-264AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 49mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 8mA
Rds On (Max) @ Id, Vgs49mOhm @ 50A, 10V
Power Dissipation (Max)1890W (Tc)
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds20000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)

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