PartsCubeGlobal
IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IXFA90N20X3

MOSFET N-CH 200V 90A TO263AA

IXFA90N20X3 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HiPerFET™, Ultra X3

Status

Active

$9.11 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFA90N20X3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)12.8mOhm @ 45A, 10V
Vgs(th) (Max)4.5V @ 1.5mA
Gate Charge (Qg)78 nC @ 10 V
Input Capacitance (Ciss)5420 pF @ 25 V
Power Dissipation (Max)390W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263 (IXFA)
RoHSRoHS
Part StatusActive

Application & Notes

IXFA90N20X3 by IXYS is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12.8mOhm @ 45A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

FDB8442-F085onsemi

MOSFET N-CH 40V 28A TO263AB

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 1.5mA
Rds On (Max) @ Id, Vgs12.8mOhm @ 45A, 10V
Power Dissipation (Max)390W (Tc)
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds5420 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.