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IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IXFA7N100P-TRL

MOSFET N-CH 1000V 7A TO263

IXFA7N100P-TRL by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HiPerFET™, Polar

Status

Active

$4.00 / unit (market reference)

MOQ: 800 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFA7N100P-TRL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1000 V
Rds On (Max)1.9Ohm @ 3.5A, 10V
Vgs(th) (Max)6V @ 1mA
Gate Charge (Qg)47 nC @ 10 V
Input Capacitance (Ciss)2590 pF @ 25 V
Power Dissipation (Max)300W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263 (D2Pak)
RoHSRoHS
Part StatusActive

Application & Notes

IXFA7N100P-TRL by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.9Ohm @ 3.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id6V @ 1mA
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.5A, 10V
Power Dissipation (Max)300W (Tc)
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Drain to Source Voltage (Vdss)1000 V
Input Capacitance (Ciss) (Max) @ Vds2590 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)

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