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IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IXFA230N075T2-TRL

MOSFET N-CH 75V 230A TO263

IXFA230N075T2-TRL by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HiPerFET™, TrenchT2™

Status

Active

$4.16 / unit (market reference)

MOQ: 800 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFA230N075T2-TRL
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)4.2mOhm @ 50A, 10V
Vgs(th) (Max)4V @ 1mA
Gate Charge (Qg)178 nC @ 10 V
Input Capacitance (Ciss)10500 pF @ 25 V
Power Dissipation (Max)480W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263 (D2Pak)
RoHSRoHS
Part StatusActive

Application & Notes

IXFA230N075T2-TRL by IXYS is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.2mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Power Dissipation (Max)480W (Tc)
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds10500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C230A (Tc)

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