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IXYSTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IXFA22N60P3

MOSFET N-CH 600V 22A TO263AA

IXFA22N60P3 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HiPerFET™, Polar3™

Status

Active

$3.91 / unit (market reference)

MOQ: 300 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFA22N60P3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)390mOhm @ 11A, 10V
Vgs(th) (Max)5V @ 1.5mA
Gate Charge (Qg)38 nC @ 10 V
Input Capacitance (Ciss)2600 pF @ 25 V
Power Dissipation (Max)500W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263 (IXFA)
RoHSRoHS
Part StatusActive

Application & Notes

IXFA22N60P3 by IXYS is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 390mOhm @ 11A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 1.5mA
Rds On (Max) @ Id, Vgs390mOhm @ 11A, 10V
Power Dissipation (Max)500W (Tc)
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C22A (Tc)

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