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IXYSTO-247-3RoHS

IXDR30N120

IGBT 1200V 50A 200W ISOPLUS247

Subcategory

Transistors Igbts Single

Package

TO-247-3

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXDR30N120
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)200 W
Supplier Device PackageISOPLUS247™
RoHSRoHS
Part StatusActive

Application & Notes

IXDR30N120 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypeNPT
Input TypeStandard
Gate Charge120 nC
Power - Max200 W
Test Condition600V, 30A, 47Ohm, 15V
Switching Energy4.6mJ (on), 3.4mJ (off)
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 30A
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)60 A
Voltage - Collector Emitter Breakdown (Max)1200 V

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